Oxide based photosensor thin film transistor for interactive display

Author

Seung-eon Ahn ; Ihun Song ; Yongwoo Jeon ; Jihoon Ahn ; Seunghyup Lee ; Jungwoo Kim ; Hyung Choi ; U-In Chung

Author_Institution

Samsung Adv. Inst. of Technol., Samsung Electron. Corporations, Yongin, South Korea

fYear

2013

fDate

2-5 July 2013

Firstpage

67

Lastpage

70

Abstract

Among various semiconductor devices, electronically active oxide thin film transistors (TFTs) have received considerable attention for a wide range of device applications. Double metal-oxide thin film transistor (TFT) shows high photo current as I_light/I_dark >10⁶, a mobility of >10cm²/Vs and high stability under LCD operation condition. In this paper, the possibility of a novel application of an optical touch screen which is entirely based on the metal oxide TFT is proposed.

Keywords

photoconductivity; thin film transistors; touch sensitive screens; LCD operation condition; TFT; double metal-oxide thin film transistor; electronically active oxide thin film transistors; interactive display; optical touch screen; oxide based photosensor thin film transistor; photocurrent; Logic gates; Metals; Optical switches; Photoconductivity; Tactile sensors; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617779