Title :
A novel a-InGaZnO TFT based voltage programmed pixel circuit to compensate threshold voltage and mobility variations
Author :
Yongchan Kim ; Kanicki, J. ; Hojin Lee
Author_Institution :
MEMS Display & Sensor Lab., Soongsil Univ., Seoul, South Korea
Abstract :
In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.
Keywords :
LED displays; amorphous semiconductors; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; zinc compounds; AMOLED; InGaZnO; a-InGaZnO TFT; active-matrix organic light-emitting display; amorphous indium gallium zinc oxide thin-film transistor; electrical stability; electrical uniformity; mobility variations; threshold voltage; voltage programmed pixel circuit; Active matrix organic light emitting diodes; Capacitors; Integrated circuit modeling; Logic gates; Thin film transistors; Threshold voltage;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
