Title :
Grain growth control by micro-thermal-plasma-jet irradiation to amorphous silicon strips through slit masks and its application to high-performance thin-film transistors
Author :
Hayashi, Shin´ichiro ; Fujita, Yoshikazu ; Morisaki, Shuji ; Kamikura, Takahiro ; Yamamoto, Seiichi ; Akazawa, M. ; Higashi, Seiichiro
Author_Institution :
Dept. of Semicond. Electron. & Integration Sci., Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
15 to 200-nm-thick amorphous silicon (a-Si) films, which were patterned to strips with 10 μm in length and 1 μm in width, are crystallized by micro-thermal-plasma-jet (μ-TPJ) irradiation through a slit mask. With the increase in film thickness (tSi), the decrease in grain boundaries significantly decreased. The average field effect mobility (μFE) of n-type TFTs fabricated by crystallized-Si strips increased from 297 to 458 cm2V-1s-1 with the increase in tSi from 70 to 235 nm. N and p-type TFTs of tSi = 235 nm showed very high μFE of 520 and 160 cm2V-1s-1, respectively.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; field effect transistors; grain boundaries; grain growth; masks; plasma materials processing; semiconductor growth; semiconductor thin films; silicon; thin film transistors; Si; a-Si films; amorphous silicon films; amorphous silicon strips; average field effect mobility; crystallized-Si strips; film thickness; grain boundaries; grain growth control; high-performance thin-film transistors; microthermal-plasma-jet irradiation; n-type TFT; p-type TFT; size 1 mum; size 10 mum; size 15 nm to 235 nm; slit masks; Crystallization; Films; Iron; Radiation effects; Silicon; Strips; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
