Title :
Reduction of hump effect of thin-film transistor by SiNx Film
Author :
Kobayashi, Takehiko ; Matsuo, Naoto ; Heya, Akira ; Yokoyama, Shiyoshi
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Abstract :
The short channel effect appeared in scaled down polysilicon TFT becomes a crucial issue, as the number of the pixel increases. The influence of the very thin SiNx film which is formed at the surface of the poly-Si island on the hump effect of the scaled down polysilicon thin-film transistor (TFT) is examined. It was clarified that the SiNx film with a thickness of 1.7 nm which was formed at the interface between the poly-Si source/drain and Al electrode suppressed the hump characteristics of TFT. It is thought that the fixed charge in the SiNx film suppressed the formation of the parasitic channel in the poly-Si edge.
Keywords :
aluminium; electrodes; elemental semiconductors; silicon; silicon compounds; thin film transistors; thin films; SiNx-Si-Al; hump effect; poly-Si source-drain electrode; polysilicon TFT; polysilicon thin-film transistor; short channel effect; Educational institutions; Electrodes; Films; Logic gates; MOSFET; Thin film transistors; Tunneling;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
