Thin film photo-sensor by BLDA to realize system on panel

Author

Koswaththage, Charith Jayanada ; Chinen, Satoshi ; Sugihara, K. ; Okada, Takashi ; Noguchi, Takashi

Author_Institution

Fac. of Eng., Univ. of the Ryukyus, Okinawa, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

141

Lastpage

142

Abstract

Improvement on photo current characteristics and crystallinity of Si thin film crystallized using BLDA was acquired successfully. Thin layer of a-Si was deposited on glass at room temperature. As a result of BLDA for the Si films, improvement of crystallinity was observed with the increase of laser power. Compared to micro-grain Si film produced at 4W, higher I_photo/I_dark ratio of 7.8 was obtained with the film treated at 6W. Multi-layer structure, which has been proposed, was simulated to assist and improve the poor absorption in red and IR light of thin poly-crystallized Si film. Significant increase in the light absorption in red and IR was obtained. BLDA is promising to next generation functional SoP technology with TFT photo-sensors.

Keywords

annealing; elemental semiconductors; infrared spectra; optical sensors; photoconductivity; semiconductor lasers; semiconductor thin films; silicon; thin film sensors; BLDA; IR light absorption; Si; Si thin film; SiO₂; blue multilaser diode annealing; crystallinity; functional SoP technology; glass; laser power; multilayer structure; photocurrent characteristics; power 4 W; power 6 W; red light absorption; temperature 293 K to 298 K; thin film photosensor; Absorption; Annealing; Films; Glass; Power lasers; Sensitivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617798