Comparison of crystal structures among CAAC-InGaZnO, nc-InGaZnO, and solution-processed InGaZnO

Author

Kikuchi, Erumu ; Ishihara, Noboru ; Oota, Masashi ; Tsubuku, Masashi ; Tomisu, Hiroyuki ; Nakashima, Masahiro ; Hirohashi, Takuya ; Takahashi, Masaharu ; Yamazaki, Shumpei

Author_Institution

Semicond. Energy Lab. Co., Ltd., Atsugi, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

147

Lastpage

150

Abstract

In order to fabricate a highly reliable InGaZnO-TFT, it is important to form a highly crystalline InGaZnO film with few defects. Evaluation of the crystallinity of InGaZnO is necessary for improving a reliability of InGaZnO-TFT. This paper presents comparison of crystallinities among three kinds of InGaZnO films, which are a CAAC-InGaZnO film having c-axis alignment, a nano-crystalline InGaZnO (nc-InGaZnO) film including significantly nano-order crystal grains, and a solution-processed InGaZnO film having low density. As a result of the comparison, it was found out that even the least crystalline solution-processed InGaZnO film partly includes crystal regions. Further, the results also revealed that it is hard to form uniformly amorphous InGaZnO.

Keywords

II-VI semiconductors; gallium compounds; indium compounds; nanostructured materials; semiconductor thin films; wide band gap semiconductors; zinc compounds; CAAC-InGaZnO film; InGaZnO; c-axis alignment; crystal regions; crystal structure; crystalline solution-processed film; crystallinity; nano-order crystal grains; nanocrystalline film; Crystals; Diffraction; Extraterrestrial measurements; Films; Impurities; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617801