Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film

Per-hydro-polysilazane as SiO₂ precursor was spin-coated on the polycrystalline silicon substrate and CO₂ laser was irradiated to per-hydro-polysilazane for transformation into SiO₂. Atomic force microscope analysis showed that the appropriate condition of CO₂ laser is possible to form flat SiO₂ film on poly-Si surface which has ridges. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis revealed that high quality and uniform SiO₂ film in the depth direction was obtained by CO₂ laser annealing compared with conventional furnace annealing.