Title :
Effect of a stimulation layer on solid-phase crystallization of an amorphous Si film by pulse laser irradiation
Author :
Mai Lien Thi Kieu ; Mochizuki, K. ; Horita, Satoshi
Author_Institution :
Japan Adv. Inst. Sci. & Tech. (JAIST), Ishikawa, Japan
Abstract :
Solid-phase crystallization of an amorphous Si film by pulse laser beam is investigated using a stimulation layer of yttria-stabilized zirconia (YSZ), compared with that on glass substrate. It is found that, at high pulse number, FWHM of c-Si peaks and crystalline fractions of Si films on YSZ layers are smaller and higher, respectively, than those on glass substrates. Moreover, grain size of Si on YSZ layers is more uniform, compared with that on glass substrates. It is considered that the results are owed to crystallization stimulation effect of YSZ layer.
Keywords :
amorphous semiconductors; crystallisation; electron beam deposition; elemental semiconductors; grain size; laser beam effects; semiconductor growth; semiconductor thin films; silicon; yttrium compounds; zirconium compounds; Si-Y2O3-ZrO2; SiO2; amorphous silicon film; electron beam evaporation; glass substrate; grain size; pulse laser beam irradiation; solid-phase crystallization; yttria stabilized zirconia stimulation layer; Annealing; Crystallization; Films; Glass; Laser beams; Silicon; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
