Title :
Characteristic deviation of excimer-laser crystallized poly-Si thin-film transistors and layout design of operational amplifiers
Author :
Kimura, Mizue ; Morii, Shota ; Ono, Yuto ; Ito, Yu ; Matsuda, Tadamitsu
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
The characteristic deviation of excimer-laser crystallized (ELC) poly-Si thin-film transistors (TFTs) with wide channel is compared between TFTs with channel regions parallel to laser shots (parallel TFTs) and TFTs with channel regions perpendicular to laser shots (perpendicular TFTs). It is found that the characteristic deviation is smaller for perpendicular TFTs. Moreover, layout design of operational amplifiers (OPAMPs) is investigated. It is found that the amplifying characteristic is quite different between the OPAMPs consisting of parallel and perpendicular TFTs. However, the influence from the characteristic difference can be reduced using a feedback circuit.
Keywords :
crystallisation; elemental semiconductors; excimer lasers; operational amplifiers; semiconductor device models; silicon; thin film transistors; Si; amplifying characteristic; characteristic deviation; characteristic difference; excimer-laser crystallized Poly-Si thin-film transistors; feedback circuit; laser shots; layout design; operational amplifiers; Films; Lasers; Layout; Logic gates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
