Title :
Evaluation of damages using electron spin resonance (ESR) in oxide semiconductors induced by plasma
Author :
Matsuda, Tadamitsu ; Nishimoto, Daiki ; Takahashi, Koichi ; Ueno, Tomohiro ; Kimura, Mizue
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
Damage induced in IGZO and ZnO powder by Ar or O2 plasma was evaluated by electron spin resonance (ESR) measurement. The ESR signals were newly found at g-factor at 1.939 with peak to peak width at 0.97 mT, and weak ESR signal at g-factor at 2.0030 for plasma-damaged IGZO powder, respectively. These ESR signals would be due to the oxygen vacancies in IGZO material surrounded by In3+, Ga3+, or Zn2+ with trapping an unpaired electron. The information about the oxygen vacancy induced by damage would be very hopeful for application of the materials in electrical devices.
Keywords :
II-VI semiconductors; electron traps; g-factor; gallium compounds; indium compounds; paramagnetic resonance; plasma materials processing; powders; sputter deposition; vacancies (crystal); wide band gap semiconductors; zinc compounds; ESR signal; InGaZnO4; ZnO; argon plasma treatment; damage evaluation; electrical devices; electrical properties; electron spin resonance meausrement; g-factor; gallium; indium; magnetron sputtering; oxide semiconductors; oxygen plasma treatment; oxygen vacancies; plasma-damaged IGZO powder; unpaired electron traps; zinc; zinc oxide powder; Magnetic field measurement; Materials; Plasma measurements; Plasmas; Powders; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
