DocumentCode :
63910
Title :
Achieving High Field-Effect Mobility Exceeding 50 cm 
/Vs in In-Zn-Sn-O Thin-Film Transistors
Author :
Ji Hun Song ; Kwang Suk Kim ; Yeon Gon Mo ; Rino Choi ; Jae Kyeong Jeong
Author_Institution :
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Volume :
35
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
853
Lastpage :
855
Abstract :
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm2/Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an ION/OFF ratio of >2 × 108. The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.
Keywords :
etching; field effect transistors; indium compounds; passivation; thin film transistors; zinc compounds; InZnSnO; TFT; bottom gate etch stopper-type thin-film transistor; field-effect mobility; negative bias stress condition; nitride passivated device; oxide passivated device stability; positive bias stress condition; trap density; voltage 0.1 V; Hydrogen; Logic gates; NIST; Passivation; Thin film transistors; Tin; Indium zinc tin oxide semiconductor; high mobility; hydrogen; nitride film; passivation; thin-film transistors; thin-film transistors.;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2329892
Filename :
6840993
Link To Document :
