Charge transport under microwave irradiation in Josephson heterostrucrures superconductor - doped semiconductor - superconductor

Molybdenum-rhenium (MoRe) alloy based Josephson junction with various transparency distribution functions have been fabricated and studied. MoRe-Si(doped by tungsten)-MoRe junctions have been fabricated by using thin films deposition techniques. Bottom MoRe electrodes with a thickness of about 100 nm have been fabricated by magnetron sputtering in argon atmosphere. Silicon (Si) barriers doped by tungsten (W) have been fabricated by magnetron sputtering in argon atmosphere with the use of a complicated target assembled from a pure silicon wafer and a number of tungsten wires. Top MoRe electrodes with a thickness of about 100 nm have been fabricated by magnetron sputtering as well. Current-voltage characteristics (I-V curves) of the fabricated Josephson junctions have been measured at various temperature and magnetic field values.