Submillimeter diode on gallium arsenide nanostructure

Present-day technology allows manufacturing of GaAs/AlGaAs heterostructures with layers width down to a nanometer. Time of electron tunneling through AlGaAs potential barrier with such width and height of a few tenths of electron volt is less than a picosecond. It makes possible to create microwave diode on base of the single-barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer with comparable time delays of electron tunneling and transit. Microwave impedance of the diode we study in framework of small-signal theory but with considering electron injection delay along with transit delay as for resonant-tunneling diode.