Terahertz diode on gallium nitride microcathode

Author

Goncharuk, N.M. ; Karushkin, N.F. ; Malyshko, V.V. ; Orehovskiy, V.A.

Author_Institution

State Enterprise Res. Inst. “Orion”, Kiev, Ukraine

fYear

2013

fDate

23-28 June 2013

Firstpage

85

Lastpage

87

Abstract

A model of small-signal impedance of semiconductor transit-time diode with injection time of electron negligible less than its transit time had been developed by Sze [1]. Modification of the model with consideration of injection delay has been applied on studying of semiconductor [2] and vacuum [3] resonant-tunneling diodes impedance. We apply the modification to investigate impedance of a diode on AlGaN micro-cathode with electron field emission and transit in vacuum layer with comparable emission and transit time delays.

Keywords

III-V semiconductors; aluminium compounds; electrochemical electrodes; electron field emission; gallium compounds; micromechanical devices; microwave diodes; nitrogen compounds; resonant tunnelling diodes; semiconductor devices; AlGaN; electron field emission; electron injection time; gallium nitride microcathode; injection delay; semiconductor resonant-tunneling diodes impedance; semiconductor transit-time diode; small-signal impedance model; terahertz diode; transit time delays; vacuum layer; vacuum resonant-tunneling diodes impedance; Delays; Electric potential; Impedance; Resistance; Resonant tunneling devices; Semiconductor diodes; Time-frequency analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on

Conference_Location

Kharkiv

Print_ISBN

978-1-4799-1066-3

Type

conf

DOI

10.1109/MSMW.2013.6622200

Filename

6622200