• DocumentCode
    641341
  • Title

    Design exploration methodology for memristor-based spiking neuromorphic architectures with the Xnet event-driven simulator

  • Author

    Bichler, Olivier ; Roclin, David ; Gamrat, Christian ; Querlioz, Damien

  • Author_Institution
    LIST, CEA, Gif-sur-Yvette, France
  • fYear
    2013
  • fDate
    15-17 July 2013
  • Firstpage
    7
  • Lastpage
    12
  • Abstract
    We introduce an event-based methodology, and its accompanying simulator (“Xnet”) for memristive nanodevice-based neuromorphic hardware, which aims to provide an intermediate modeling level, between low-level hardware description languages and high-level neural networks simulators used primarily in neurosciences. This simulator was used to establish several results on Spike-Timing-Dependent Plasticity (STDP) modeling and implementation with Resistive RAM (RRAM), Conductive Bridge RAM (CBRAM) and Phase-Change Memory (PCM) type of memristive nanodevices. We present several simulation case studies that illustrate the event-based simulation strategies that we implemented, including unsupervised features extraction and Monte Carlo simulations. A discussion comparing event-based and fixed time-step simulation is included as well, and gives some metrics to guide the choice between the two depending on the application to simulate.
  • Keywords
    Monte Carlo methods; circuit simulation; memristors; neural nets; phase change memories; random-access storage; Monte Carlo simulations; Xnet event-driven simulator; conductive bridge RAM; design exploration methodology; high-level neural networks simulators; low-level hardware description languages; memristor-based spiking neuromorphic architectures; phase-change memory; resistive RAM; spike-timing-dependent plasticity modeling; Computational modeling; Hardware; Monte Carlo methods; Nanoscale devices; Neuromorphics; Neurons; Phase change materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
  • Conference_Location
    Brooklyn, NY
  • Print_ISBN
    978-1-4799-0873-8
  • Type

    conf

  • DOI
    10.1109/NanoArch.2013.6623029
  • Filename
    6623029