Title :
Design of 60GHZ MMIC LNA in mHEMT technology
Author :
Da-Wei Zhang ; Jun Li ; Hai-Hong Ma
Author_Institution :
China Acad. Of Space Technol. (Xi´An), Xi´an, China
Abstract :
A 60GHz MMIC Low-noise Amplifier (LNA) was designed and simulated using OMMIC´s 130nm GaAs mHEMT process. Based on the simulating results of Momentum, the main features of the LNA designed can be summarized as following: the three-stage LNA can reach 17dB average gain with less than ±0.5dB ripple in the operating frequency range (from 56GHz to 63GHz) and the noise figure is less than 3.15dB. Total chip size is 3000um×2000um.
Keywords :
MMIC amplifiers; high electron mobility transistors; low noise amplifiers; MHEMT technology; MMIC LNA; MMIC low-noise amplifier; OMMIC; frequency 56 GHz to 63 GHz; frequency range; gain 17 dB; mHEMT process; noise figure; three-stage LNA; 60GHz; LNA; MMIC;
Conference_Titel :
Radar Conference 2013, IET International
Conference_Location :
Xi´an
Electronic_ISBN :
978-1-84919-603-1
DOI :
10.1049/cp.2013.0452
