• DocumentCode
    642054
  • Title

    Problems of plasmachemical etching of Si related to 3D structures formation (technology of Tri-Gate nanotransistors)

  • Author

    Bogmolov, Boris K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2012
  • fDate
    2-4 Oct. 2012
  • Firstpage
    7
  • Lastpage
    12
  • Abstract
    The results of plasmachemical CCl2F2/O2 etching of Si in a quartz reactor with teflon coating are considered. The consistent model is developed for the plasmachemical CCl2F2/O2 etching of Si in the plasma in the conditions of efficient supply of chemically active particles caused by etching of the teflon. The Si etching depth was 180 μm after 30 min.
  • Keywords
    coatings; nanoelectronics; quartz; silicon; sputter etching; 3D structures formation; CCl2F2-O2; Si; chemically active particles; plasmachemical etching; quartz reactor; silicon etching depth; teflon coating; tri-gate nanotransistors; Coatings; Educational institutions; Etching; Inductors; Postal services; Silicon; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4673-2842-5
  • Type

    conf

  • DOI
    10.1109/APEIE.2012.6628921
  • Filename
    6628921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=642054