DocumentCode
642061
Title
Creation of tunnel junction with scanning probe lithography
Author
Pavlova, Anastasia Yu ; Khivintsev, Yurii V. ; Filimonov, Yuri A. ; Tiercelin, Nicolas ; Pernod, Philippe
Author_Institution
Saratov State Tech. Univ., Saratov, Russia
fYear
2012
fDate
2-4 Oct. 2012
Firstpage
111
Lastpage
113
Abstract
Atomic force microscope was used to create nanosized oxide line crossing over the whole width a nickel oxide film based microstructure. The created structure revealed tunnel barrier type I-V characteristics.
Keywords
atomic force microscopy; lithography; nanoelectronics; nanostructured materials; nickel compounds; tunnelling; atomic force microscope; nanosized oxide line; nickel oxide film based microstructure; scanning probe lithography; tunnel barrier type I-V characteristics; tunnel junction; Atomic force microscopy; Films; Force; Lithography; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4673-2842-5
Type
conf
DOI
10.1109/APEIE.2012.6628942
Filename
6628942
Link To Document