A simple extraction procedure for determining the electrical parameters in Silicon Photomultipliers

The Silicon Photomultiplier (SiPM) is a promising kind of device able to handle single photons thus permitting the measurement of weak optical signals. The design of a highperformance front-end electronics for the read-out, requires an accurate electrical model of the SiPM. A reliable model was developed in the past but the parameter extraction procedure is rather cumbersome and requires several measurement steps. In this communication we present a simple extraction procedure that can be performed with two simple measurement steps. The extraction procedure is applied to a 10×10 SiPM and is validated by comparing the equivalent spice model to measurement results.