Memristor macromodel and its application to neuronal spike generation

This paper introduces a memristor-based neuronal spike event generator, in which the memristor models the nonlinear behavior of opening and closing of sodium and potassium ion channels. The neuronal action potential describing both the integrate-and-fire spiking events and the refractory period of nerve membrane cells is enabled by utilizing dual time-constants offered by the bistable resistance state of practical memristive devices. A memristor macromodel which is capable of representing both the threshold effects and boundary assurance is also presented.