Title :
An input amplitude modulated harmonic outphasing PA
Author :
Abou-Chahine, Zeid ; Felgentreff, Tilman ; Fischer, Georg ; Weigel, Robert
Author_Institution :
RF Technol., Nokia Siemens Networks GmbH, Ulm, Germany
Abstract :
In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; power amplifiers; power combiners; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT; deep class C bias; input amplitude modulated harmonic outphasing PA; power 30 W; power amplifier; power back off; unmatched combiner; Current measurement; Harmonic analysis; Impedance; Modulation; Power amplifiers; Radio frequency; Transistors; Base stations; load modulation; outphasing architecture; power combining; radiofrequency (RF) amplifiers;
Conference_Titel :
Microwave Symposium (MMS), 2013 13th Mediterranean
Conference_Location :
Saida
DOI :
10.1109/MMS.2013.6663082
