CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor

Author

Yousef, K. ; Jia, Hongjie ; Pokharel, R. ; Allam, A. ; Ragab, M. ; Kanaya, Haruichi ; Yoshida, Kenta

Author_Institution

Electron. & Commun. Eng. Dept., Egypt-Japan Univ. of Sci. & Technol., Alex, Egypt

fYear

2013

fDate

15-18 Sept. 2013

Firstpage

267

Lastpage

269

Abstract

This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; field effect MMIC; inductors; low noise amplifiers; three-dimensional integrated circuits; ultra wideband technology; CMOS ultra-wideband low noise amplifier; UWB-LNA; frequency 2 GHz to 16 GHz; input impedance matching; isolation; output impedance matching; size 0.18 mum; symmetric 3D RF integrated inductor; voltage 1.8 V; CMOS integrated circuits; Gain; Impedance matching; Inductors; Radio frequency; Three-dimensional displays; Ultra wideband technology; Low Noise Amplifier (LNA); Symmetric 3D RF integrated inductor; Ultra wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2013 IEEE International Conference on

Conference_Location

Sydney, NSW

ISSN

2162-6588

Type

conf

DOI

10.1109/ICUWB.2013.6663860

Filename

6663860