A 2 MHz 1 V programmable gain amplifier for WSN application

Author

Yang Chengsi ; Li Zhiqun

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

fYear

2013

fDate

5-8 Aug. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a low-voltage and low-power programmable gain amplifier (PGA) for Wireless Sensor Network (WSN) in 0.18 μm CMOS process. MOSFETs biased to moderate inversion region are applied in order to achieve maximum voltage gain, low device dissipation, and high linearity, simultaneously. The proposed PGA consists of three fixed-gain stages and a variable-gain stage. It works at 2 MHz with a voltage gain range of 0 dB to 70 dB in steps of 2 dB. Postsimulation results show that the -3 dB-bandwidth is higher than 6.6 MHz with capacitive loads of 2 pF. The whole PGA consumes less than 1.26 mW with a 1 V supply.

Keywords

CMOS analogue integrated circuits; MOSFET; low-power electronics; programmable circuits; radiofrequency amplifiers; radiofrequency integrated circuits; wireless sensor networks; CMOS process; MOSFET; PGA; WSN application; capacitance 2 pF; fixed-gain stage; frequency 2 MHz; gain -3 dB; gain 0 dB to 70 dB; inversion region moderation; low device dissipation; low-voltage low-power programmable gain amplifier; maximum voltage gain; size 0.18 mum; variable-gain stage; voltage 1 V; wireless sensor network; Bandwidth; Electronics packaging; Gain; Linearity; MOSFET; Radio frequency; Wireless sensor networks; Low power; Low voltage; PGA; RF circuits; WSN;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing, Communication and Computing (ICSPCC), 2013 IEEE International Conference on

Conference_Location

KunMing

Type

conf

DOI

10.1109/ICSPCC.2013.6664105

Filename

6664105