Title :
A 2 MHz 1 V programmable gain amplifier for WSN application
Author :
Yang Chengsi ; Li Zhiqun
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presents a low-voltage and low-power programmable gain amplifier (PGA) for Wireless Sensor Network (WSN) in 0.18 μm CMOS process. MOSFETs biased to moderate inversion region are applied in order to achieve maximum voltage gain, low device dissipation, and high linearity, simultaneously. The proposed PGA consists of three fixed-gain stages and a variable-gain stage. It works at 2 MHz with a voltage gain range of 0 dB to 70 dB in steps of 2 dB. Postsimulation results show that the -3 dB-bandwidth is higher than 6.6 MHz with capacitive loads of 2 pF. The whole PGA consumes less than 1.26 mW with a 1 V supply.
Keywords :
CMOS analogue integrated circuits; MOSFET; low-power electronics; programmable circuits; radiofrequency amplifiers; radiofrequency integrated circuits; wireless sensor networks; CMOS process; MOSFET; PGA; WSN application; capacitance 2 pF; fixed-gain stage; frequency 2 MHz; gain -3 dB; gain 0 dB to 70 dB; inversion region moderation; low device dissipation; low-voltage low-power programmable gain amplifier; maximum voltage gain; size 0.18 mum; variable-gain stage; voltage 1 V; wireless sensor network; Bandwidth; Electronics packaging; Gain; Linearity; MOSFET; Radio frequency; Wireless sensor networks; Low power; Low voltage; PGA; RF circuits; WSN;
Conference_Titel :
Signal Processing, Communication and Computing (ICSPCC), 2013 IEEE International Conference on
Conference_Location :
KunMing
DOI :
10.1109/ICSPCC.2013.6664105