DocumentCode
64409
Title
Bipolar Poisson Solution for Independent Double-Gate MOSFET
Author
Abraham, Aby ; Thakur, Pankaj Kumar ; Mahapatra, Santanu
Author_Institution
Intel Technol. India Pvt. Ltd., Bangalore, India
Volume
60
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
498
Lastpage
501
Abstract
We propose a new set of input voltage equations (IVEs) for independent double-gate MOSFET by solving the governing bipolar Poisson equation (PE) rigorously. The proposed IVEs, which involve the Legendre´s incomplete elliptic integral of the first kind and Jacobian elliptic functions and are valid from accumulation to inversion regimes, are shown to have good agreement with the numerical solution of the same PE for all bias conditions.
Keywords
MOSFET; Poisson equation; elliptic equations; integral equations; semiconductor device models; Jacobian elliptic functions; Legendre incomplete elliptic integral equation; bipolar Poisson solution; governing bipolar Poisson equation; independent double-gate MOSFET; input voltage equations; Approximation methods; Electric potential; Electron devices; Equations; Logic gates; MOSFET circuits; Mathematical model; Compact modeling; Poisson solution; independent double-gate (IDG) MOSFET;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2223703
Filename
6341811
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