Title :
Broadband Ferromagnetic Resonance Study of
Thin Films: Effect of the Film Thickness
Author :
Ortiz, G. ; Garcia, Alvaro ; Ben Youssef, J. ; Biziere, N. ; Boust, F. ; Bobo, J. ; Snoeck, E. ; Vukadinovic, N.
Author_Institution :
Onera - The French Aerosp. Lab., Toulouse, France
Abstract :
The thickness dependence of the static and dynamic properties of Co2MnSi (CMS) full Heusler was investigated. Five samples with thickness ranging from 7 to 100 nm were deposited by rf magnetron sputtering on single crystal MgO(001). X-ray diffraction and transmission electron microscopy (TEM) evidence the epitaxial growth of samples, with an epitaxial relationship MgO(001)[100]//CMS(011)[110]. Magnetic properties were studied by standard magnetometry and broadband stripline ferromagnetic resonance (FMR). We observe a four-fold magnetocrystalline anisotropy Kc = 1.5 × 105 erg/cm3 for thicker samples, and an increase of Kc up to 2.6 × 105 erg/cm3 for the thinnest sample, accompanied by an increase of saturation magnetization. We attribute this behavior to interfacial effect (strain or stoichiometry).
Keywords :
X-ray diffraction; cobalt alloys; ferromagnetic materials; ferromagnetic resonance; magnetic anisotropy; magnetic epitaxial layers; manganese alloys; metallic epitaxial layers; silicon alloys; sputter deposition; stoichiometry; transmission electron microscopy; Co2MnSi; MgO; TEM; X-ray diffraction; broadband stripline ferromagnetic resonance; dynamic properties; epitaxial growth; film thickness; four-fold magnetocrystalline anisotropy; full Heusler alloys; interfacial effect; magnetic properties; rf magnetron sputtering; saturation magnetization; single crystal MgO(001) substrate; size 7 nm to 100 nm; standard magnetometry; static properties; stoichiometry; strain; thickness dependence; thin films; transmission electron microscopy; Anisotropic magnetoresistance; Damping; Magnetic resonance; Magnetomechanical effects; Perpendicular magnetic anisotropy; Saturation magnetization; $alpha$-Gilbert damping; Heusler alloy; ferromagnetic resonance (FMR); resonance field;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2231856