Title :
Thermal analysis of III–V HBV diode structures on InP, GaAs, silicon and diamond substrates
Author :
Malko, Aleksandra ; Tang, Aik Yean ; Vukusic, Josip ; Bryllert, Tomas ; Huan Zhao ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Thermal analysis of In0.53Ga0.47As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70-110 GHz). It is shown that material transfer to substrates with higher thermal conductivities will reduce thermal resistance by 21% and approximately 50% for In0.53Ga0.47 As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained.
Keywords :
III-V semiconductors; diamond; frequency multipliers; gallium arsenide; indium compounds; millimetre wave diodes; silicon; thermal analysis; thermal conductivity; varactors; C; GaAs; GaAs substrate; HBV multiplier sources; III-V heterostructure barrier varactor diode structures; In0.53Ga0.47As; InP; InP substrate; Si; W-band; diamond substrate; frequency 70 GHz to 110 GHz; high power integrated HBV frequency multipliers; material transfer; physical dimensions; silicon substrate; thermal analysis; thermal conductivities; thermal handling capability; thermal resistance; Diamonds; Gallium arsenide; Indium phosphide; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665403
