• DocumentCode
    644455
  • Title

    Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

  • Author

    Qinjun Chen ; Dongqi Shi ; Xiaolin Wang ; Lewis, R.A. ; Chao Zhang

  • Author_Institution
    Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.
  • Keywords
    antimony compounds; bismuth; dielectric thin films; pulsed laser deposition; refractive index; Sb2Te3:Bi; complex refractive index; deposition times; dielectric properties; pulsed laser deposition; terahertz time-domain spectroscopy; thin films; Dielectrics; Educational institutions; Refractive index; Silicon; Substrates; Time-domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665422
  • Filename
    6665422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644455