DocumentCode :
644455
Title :
Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy
Author :
Qinjun Chen ; Dongqi Shi ; Xiaolin Wang ; Lewis, R.A. ; Chao Zhang
Author_Institution :
Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.
Keywords :
antimony compounds; bismuth; dielectric thin films; pulsed laser deposition; refractive index; Sb2Te3:Bi; complex refractive index; deposition times; dielectric properties; pulsed laser deposition; terahertz time-domain spectroscopy; thin films; Dielectrics; Educational institutions; Refractive index; Silicon; Substrates; Time-domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665422
Filename :
6665422
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=644455
بازگشت