• DocumentCode
    64448
  • Title

    PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

  • Author

    Gabriel, Onno ; Frijnts, Tim ; Calnan, Sonya ; Ring, Sven ; Kirner, Simon ; Opitz, Andreas ; Rothert, Inga ; Rhein, Holger ; Zelt, Matthias ; Bhatti, Khalid ; Zollondz, Jens-Hendrik ; Heidelberg, Andreas ; Haschke, Jan ; Amkreutz, Daniel ; Gall, S. ; Frie

  • Author_Institution
    PVcomB, Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
  • Volume
    4
  • Issue
    6
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1343
  • Lastpage
    1348
  • Abstract
    Liquid-phase crystallized silicon absorber layers have been applied in heterojunction solar cells on glass substrates with 10.8% conversion efficiency and an open-circuit voltage of 600 mV. Intermediate layers of SiOx, SiNx, and SiOxNy, as well as the a-Si:H precursor layer, were deposited on 30 cm × 30 cm glass substrates using industrial-type plasma-enhanced chemical vapor deposition equipment. After crystallization on 3cm × 5cm area using a continuous-wave infrared laser line, the resulting polysilicon material showed high material quality with large grain sizes.
  • Keywords
    crystallisation; elemental semiconductors; grain size; plasma CVD; semiconductor heterojunctions; silicon; silicon compounds; solar absorber-convertors; solar cells; PECVD absorber layer; PECVD intermediate layer; Si; Si:H; SiO2; SiOx-SiOxNy; continuous-wave infrared laser line; crystallization; glass substrate; grain size; heterojunction solar cell; industrial-type plasma-enhanced chemical vapor deposition; liquid-phase crystallized silicon solar cell; open-circuit voltage; polysilicon material; Chemical vapor deposition; Crystallization; Glass; Photovoltaic cells; Silicon; Substrates; Heterojunction; liquid-phase crystallization; plasma-enhanced chemical vapor deposition (PECVD); thin-film silicon;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2014.2354257
  • Filename
    6895250