Title :
Terahertz emission spectroscopy of InAs nanowires
Author :
Gyuseok Lee ; Meehyun Lim ; Youngwoong Do ; Soonsung Lee ; Hyeona Kang ; Jae Cheol Shin ; Haewook Han
Author_Institution :
Dept. of Electr. & Comput. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
We measured terahertz (THz) emission from the vertically aligned indium arsenide (InAs) nanowires using THz time-domain spectroscopy. The photoexcited InAs nanowires were grown by metalorganic chemical vapor deposition on type <;111> silicon substrate. Experimental results shows that THz emission mechanism of InAs nanowires are very different from that of bulk InAs substrates.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanowires; photoexcitation; terahertz wave generation; terahertz wave spectra; <;111> silicon substrate; InAs; Si; THz emission; THz time-domain spectroscopy; metalorganic chemical vapor deposition; photoexcited nanowires; terahertz emission spectroscopy; vertically aligned indium arsenide nanowires; Nanowires; Scanning electron microscopy; Silicon; Spectroscopy; Substrates; Time-domain analysis; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665515
