Title :
Noise performance of RTD-gated plasma-wave HEMT THz detectors
Author :
Encomendero-Risco, Jimy J. ; Sensale-Rodriguez, Berardi ; Xing, Huili Grace
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this paper, we study the noise performance of RTD-gated plasma-wave HEMT THz detectors. It is shown that noise in these devices is dominated by gate tunneling shot noise, and that a smaller effective electron mass promises much improved noise performance by boosting the responsivity while slightly decreasing the noise spectral density (NSD). This implies that it is desirable to realize RTD-gated plasma-wave HEMT THz detectors in material systems with low effective mass.
Keywords :
high electron mobility transistors; noise; resonant tunnelling diodes; terahertz wave detectors; HEMT terahertz detector; RTD gated plasma wave terahertz detector; gate tunneling shot noise; noise performance; noise spectral density; resonant tunnel diode; Detectors; Gallium nitride; HEMTs; Logic gates; MODFETs;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665523
