Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Author

Vitiello, M.S. ; Coquillat, Dominique ; Viti, L. ; Romeo, L. ; Vicarelli, L. ; Ercolani, D. ; Ferrari, A.C. ; Polini, M. ; Sorba, L. ; Pellegrini, V. ; Knap, Wojciech ; Tredicucci, A.

Author_Institution

NEST, Ist. Nanosci., Scuola Normale Super., Pisa, Italy

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels <; 10^-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications.

Keywords

field effect transistors; graphene; indium compounds; nanosensors; nanowires; quantum cascade lasers; submillimetre wave antennas; submillimetre wave transistors; temperature sensors; terahertz wave detectors; terahertz wave imaging; C; InAs; antenna-coupled field effect transistor; graphene channel material; graphene field effect transistor; large area THz imaging application; low-noise nanowire; noise equivalent power; plasma-wave THz detector; room-temperature detection; temperature 293 K to 298 K; terahertz quantum cascade laser emission; Broadband antennas; Detectors; Field effect transistors; Graphene; Imaging; Logic gates; Quantum cascade lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665536

Filename

6665536