Title :
Contribution of the gate leakage current to terahertz detection by asymmetric dual-grating gate HEMT structures
Author :
Coquillat, Dominique ; Kurita, Yuichi ; Kobayashi, Kaoru ; Teppe, F. ; Dyakonova, N. ; Consejo, C. ; But, D. ; Tohme, L. ; Nouvel, P. ; Blin, S. ; Torres, Juana ; Penarier, A. ; Otsuji, Taiichi ; Knap, Wojciech
Author_Institution :
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
Abstract :
We present experimental study of terahertz detection by asymmetric dual-grating gate HEMT structures. The separate contributions of the gate leakage current and the loading effect to the rectification signal in the sub-threshold region was investigated versus temperature and frequency range.
Keywords :
high electron mobility transistors; leakage currents; submillimetre wave detectors; asymmetric dual-grating gate HEMT structures; frequency range; gate leakage current; loading effect; rectification signal; subthreshold region; temperature; terahertz detection; Attenuation; Leakage currents; Loading; Logic gates; Temperature measurement; Threshold voltage; Voltage measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665575
