Carbon ion irradiated SI-GaAs based efficient photoconductive THz emitters using low electrical power

We demonstrate here an efficient THz source with low electrical power consumption. We have also overcome the saturation problem in THz sources at higher applied bias voltages by irradiating the SI-GaAs source substrate crystals with energetic Carbon ions. Photoconductive Emitter (PCE) source fabricated on an un-annealed Carbon irradiated SI-GaAs has shown linear increase in emitted THz Electric field amplitude with increasing applied electric field even up to 8kV/cm. The emitted THz power at higher applied bias voltages is more than a factor of 4 in comparison to the PCEs fabricated on normal unirradiated SI-GaAs under identical conditions.