DocumentCode :
644636
Title :
Generation and detection of THz radiation up to 4.5 THz using LTG-GaAs PCAs illuminated at 1560 nm
Author :
Ramer, Jan-Martin ; Ospald, Frank ; von Freymann, Georg ; Beigang, Rene
Author_Institution :
Fraunhofer Inst. for Phys. Meas. Tech. IPM, Kaiserslautern, Germany
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate generation and detection of terahertz radiation using low-temperature grown GaAs photoconductive switches excited at 1560 nm. The dependence of the DC photocurrent and the terahertz amplitude on the input power of the detector and emitter is evaluated.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; photoconductivity; photodetectors; photoemission; semiconductor growth; terahertz wave detectors; terahertz wave generation; DC photocurrent; GaAs; PCA; THz radiation detection; THz radiation generation; low-temperature grown photoconductive switch; size 1560 nm; terahertz amplitude; Absorption; Detectors; Gallium arsenide; Laser excitation; Photoconductivity; Power lasers; Principal component analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665605
Filename :
6665605
Link To Document :
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