Title :
Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures
Author :
Globisch, B. ; Stanze, D. ; Dietz, R.J.B. ; Gobel, T. ; Schell, M.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich Hertz Inst., Berlin, Germany
Abstract :
LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; carrier lifetime; gallium arsenide; indium compounds; semiconductor doping; semiconductor heterojunctions; submillimetre wave receivers; Be doping; InGaAs-InAlAs:Be; bandwidth improvement; carrier trapping time; current response; cw THz receivers; low-temperature-grown InGaAs/InAlAs heterostructures; Charge carrier processes; Doping; Indium gallium arsenide; Optical pumping; Optical variables measurement; Receivers;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665609
