DocumentCode
644689
Title
Characterisation of low temperature and semi-insulating GaAs lateral photo-dember THz emitters
Author
McBryde, D. ; Barnes, M.E. ; Gow, P.C. ; Berry, S.A. ; Daniell, Geoff J. ; Beere, H.E. ; Ritchie, D.A. ; Apostolopoulos, V.
Author_Institution
Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
We characterise a set of Lateral Photo Dember (LPD) terahertz emitters fabricated on annealed low temperature grown (LTG) GaAs, unannealed LTG-GaAs and SI-GaAs substrates. Our results show that unannealed LTG-GaAs is the most efficient LPD emitter of this set due to a higher saturation fluence.
Keywords
Dember effect; III-V semiconductors; annealing; gallium arsenide; terahertz waves; GaAs; SI-GaAs substrate; low temperature GaAs lateral photodember terahertz emitter characterisation; saturation fluence; semi-insulating GaAs lateral photodember terahertz emitter characterisation; unannealed low temperature grown-GaAs substrate; Metals; Optical pulses; Optical pumping; Optical receivers; Optical saturation; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665658
Filename
6665658
Link To Document