• DocumentCode
    644724
  • Title

    Responsivity at 0.27 THz of a heterostructure field effect transistor detector in a quasi-optical package

  • Author

    Giliberti, Valeria ; Casini, R. ; Di Gaspare, Alessandra ; Lisauskas, Alvydas ; Roskos, Hartmut G. ; Ortolani, Michele

  • Author_Institution
    IFN (Inst. for Photonics & Nanotechnol.), Rome, Italy
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens.
  • Keywords
    III-V semiconductors; aluminium compounds; electronics packaging; gallium arsenide; high electron mobility transistors; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave transistors; AlGaAs-InGaAs-AlGaAs; HFET; frequency 0.27 THz; heterostructure field effect transistor detector; integrated on-chip antennas; optical responsivity; quasioptical package; silicon substrate lens; Detectors; HEMTs; Lenses; Logic gates; MODFETs; Optical coupling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665693
  • Filename
    6665693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644724