Title :
Milliwatt output power generated in the J-Band by a GaAs photomixer
Author :
Peytavit, Emilien ; Latzel, P. ; Pavanello, Fabio ; Ducournau, Guillaume ; Lampin, Jean-Francois
Author_Institution :
IEMN, Univ. de Lille, Villeneuve-d´Ascq, France
Abstract :
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
Keywords :
III-V semiconductors; gallium arsenide; impedance matching; laser beams; mirrors; photoconducting devices; photoconducting materials; terahertz wave generation; GaAs; GaAs photomixer; J-Band; bandwidth 252 GHz; continuous wave output power; impedance matching circuit; low-temperature-grown photoconductor; metallic mirror-based Fabry-Pérot cavity; milliwatt output power; photomixing; power 1.8 mW; Capacitance; Gallium arsenide; Gold; Impedance matching; Optical saturation; Photoconducting materials; Power generation;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665739
