• DocumentCode
    644769
  • Title

    Milliwatt output power generated in the J-Band by a GaAs photomixer

  • Author

    Peytavit, Emilien ; Latzel, P. ; Pavanello, Fabio ; Ducournau, Guillaume ; Lampin, Jean-Francois

  • Author_Institution
    IEMN, Univ. de Lille, Villeneuve-d´Ascq, France
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
  • Keywords
    III-V semiconductors; gallium arsenide; impedance matching; laser beams; mirrors; photoconducting devices; photoconducting materials; terahertz wave generation; GaAs; GaAs photomixer; J-Band; bandwidth 252 GHz; continuous wave output power; impedance matching circuit; low-temperature-grown photoconductor; metallic mirror-based Fabry-Pérot cavity; milliwatt output power; photomixing; power 1.8 mW; Capacitance; Gallium arsenide; Gold; Impedance matching; Optical saturation; Photoconducting materials; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665739
  • Filename
    6665739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644769