• DocumentCode
    644809
  • Title

    Radiation polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility 2D electron systems

  • Author

    Lei, X.L. ; Liu, S.Y.

  • Author_Institution
    Dept. of Phys. & Astron., Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Effects of incident microwave polarization on electron energy absorption, electron temperature and radiation-induced magnetoresistance oscillation are examined in magnetic-field biased high-mobility two-dimensional electron systems. It is found that the absorption rate and the rise of the electron temperature are dependent on the polarization type of the radiation but independent of the direction of linearly polarized radiation. The amplitude of radiation-induced magnetoresistance oscillation, however, not only strongly depends on the polarization type but also sensitively varies with changing linear-polarization direction of the incident radiation, in agreement with recent experimental observation.
  • Keywords
    magnetoresistance; radiation effects; absorption rate; electron energy absorption; electron temperature rise; incident microwave polarization effects; incident radiation; linear-polarization direction; linearly polarized radiation direction; magnetic-field biased high-mobility 2D electron systems; microwave-induced magnetoresistance oscillations; radiation polarization dependence; radiation-induced magnetoresistance oscillation amplitude; Absorption; Equations; Magnetoresistance; Mathematical model; Microwave oscillators; Polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665779
  • Filename
    6665779