DocumentCode
644809
Title
Radiation polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility 2D electron systems
Author
Lei, X.L. ; Liu, S.Y.
Author_Institution
Dept. of Phys. & Astron., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
Effects of incident microwave polarization on electron energy absorption, electron temperature and radiation-induced magnetoresistance oscillation are examined in magnetic-field biased high-mobility two-dimensional electron systems. It is found that the absorption rate and the rise of the electron temperature are dependent on the polarization type of the radiation but independent of the direction of linearly polarized radiation. The amplitude of radiation-induced magnetoresistance oscillation, however, not only strongly depends on the polarization type but also sensitively varies with changing linear-polarization direction of the incident radiation, in agreement with recent experimental observation.
Keywords
magnetoresistance; radiation effects; absorption rate; electron energy absorption; electron temperature rise; incident microwave polarization effects; incident radiation; linear-polarization direction; linearly polarized radiation direction; magnetic-field biased high-mobility 2D electron systems; microwave-induced magnetoresistance oscillations; radiation polarization dependence; radiation-induced magnetoresistance oscillation amplitude; Absorption; Equations; Magnetoresistance; Mathematical model; Microwave oscillators; Polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665779
Filename
6665779
Link To Document