DocumentCode
644841
Title
Characterization of electrical properties of SiC epilayer by THz ellipsometry
Author
Nagashima, Tomoharu ; Iwamoto, Takuya ; Satoh, Y.
Author_Institution
Inst. of Laser Eng., Osaka Univ., Suita, Japan
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
Spectroscopic ellipsometry based on terahertz time-domain spectroscopy was used for non-contacting evaluation of SiC epilayers homo-epitaxially grown on opaque SiC substrates. The thickness, carrier density and scattering time of the epilayers were simultaneously determined.
Keywords
carrier density; ellipsometry; semiconductor epitaxial layers; silicon compounds; terahertz wave spectra; wide band gap semiconductors; SiC; THz ellipsometry; carrier density; electrical properties; epilayer thickness; noncontacting evaluation; opaque SiC substrates; scattering time; spectroscopic ellipsometry; terahertz time-domain spectroscopy; Detectors; Mirrors; Optical detectors; Optical reflection; Reflectivity; Substrates; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665811
Filename
6665811
Link To Document