Title :
Phonon polariton and infrared absorption effects in III-nitride thin films
Author :
Hatta, Kazuyuki ; Ishitani, Yoshihiro
Author_Institution :
Grad. Sch. of Electr. & Electron. Eng., Chiba Univ., Chiba, Japan
Abstract :
We discuss photon-phonon interaction in AlN and GaN thin layer structures by spectroscopic analysis in 20 - 30 THz region. Optical absorption by the generation of electric dipole moment based on interface polarization charges is found besides interface phonon polariton propagation. The polariton and absorption properties are analyzed.
Keywords :
III-V semiconductors; aluminium compounds; electric moments; gallium compounds; infrared spectra; phonons; polaritons; semiconductor thin films; wide band gap semiconductors; AlN-GaN; GaN thin layer structures; III-nitride thin films; electric dipole moment; frequency 20 THz to 30 THz; infrared absorption effects; interface phonon polariton propagation; interface polarization charges; optical absorption; phonon polariton; photon-phonon interaction; spectroscopic analysis; Absorption; Gallium nitride; III-V semiconductor materials; Optical losses; Phonons; Reflectivity; Substrates;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665818
