• DocumentCode
    644855
  • Title

    Proposal and fabrication of resonant-tunneling-diode terahertz oscillator with structure for high frequency modulation

  • Author

    Minoguchi, Kyo ; Okada, Kenichi ; Suzuki, Satoshi ; Asada, Minoru

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Although the direct-modulation frequency in a resonant-tunneling-diode oscillator increases by reducing the metal-insulator-metal capacitance, the output power degrades simultaneously. We figured out this mechanism using an equivalent circuit model. Based on this result, a novel structure was proposed and fabricated, and terahertz oscillation without degradation in output power was obtained.
  • Keywords
    MIM devices; equivalent circuits; modulation; oscillators; resonant tunnelling diodes; direct-modulation frequency; equivalent circuit; fabrication; high frequency modulation; metal-insulator-metal capacitance; resonant-tunneling-diode terahertz oscillator; Capacitance; Frequency modulation; Oscillators; Power generation; Resistance; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665826
  • Filename
    6665826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644855