FIR photoconductivity spectra and kinetics in narrow-gap HgCdTe bulk films and HgCdTe based QW

Author

Rumyantsev, V.V. ; Morozov, S.V. ; Antonov, A.V. ; Zholudev, M.S. ; Kudryavtsev, K.E. ; Gavrilenko, V.I. ; Dvoretskii, S.A. ; Mikhailov, N.N.

Author_Institution

Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Investigation into far infrared photoconductivity in narrow gap epitaxial bulk Hg_1-xCd_xTe (x<;0.2) films and Hg_1-xCd_xTe/Cd_yHg_1-yTe QW structures grown by molecular beam epitaxy technique is presented. A broad band of photosensitivity in terahertz region is found at 4.2 K - 77 K. Some long-wavelength peculiarities of spectra are discovered and their origins are discussed. Lifetime studies demonstrate the possibility of radiative recombination at high excitation regime. Estimations of ampere-watt sensitivity show that some of the structures are applicable for detecting in very long-wavelength infrared range.

Keywords

II-VI semiconductors; cadmium compounds; infrared spectra; mercury compounds; molecular beam epitaxial growth; photoconductivity; semiconductor quantum wells; semiconductor thin films; FIR photoconductivity spectra; Hg_1-xCd_xTe-Cd_yHe_1-yTe; ampere-watt sensitivity; epitaxial bulk film; far infrared photoconductivity; long wavelength peculiarity; molecular beam epitaxy; narrow gap bulk film; photosensitivity; radiative recombination; temperature 4.2 K to 77 K; Charge carrier lifetime; Films; Finite impulse response filters; Kinetic theory; Magnetic fields; Photonic band gap; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665835

Filename

6665835