DocumentCode
644882
Title
Perspectives of graphene SymFETs for THz applications
Author
Sensale-Rodriguez, Berardi ; Pei Zhao ; Jena, D. ; Xing, Huili Grace
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
1
Abstract
We explore the potential of graphene symmetric tunneling field effect transistors (SymFETs) for THz applications. The interplay between the negative differential conductance in these devices and electron plasma waves occurring in the graphene layers might lead to very sensitive THz detection (R > 100 kV/W) or amplifiers with power gains ~ 7 dB at RT.
Keywords
electric admittance; graphene; millimetre wave field effect transistors; plasma waves; tunnel transistors; SymFET; THz applications; THz detection; amplifiers; electron plasma waves; graphene layers; negative differential conductance; symmetric tunneling field effect transistors; Coherence; Detectors; Graphene; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665853
Filename
6665853
Link To Document