DocumentCode
644891
Title
Photosensitivity of lead telluride doped with mixed valence impurities in the terahertz spectral range
Author
Ryabova, Ludmila ; Chernichkin, Vladimir ; Dobrovolsky, A. ; Nicorici, Andrey ; Danilov, Sergey ; Khokhlov, D.
Author_Institution
Moscow State Univ., Moscow, Russia
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
The effect of PbTe doping with In, Ga and V on photoconductive response at wavelengths up to 280 μm is studied. Mechanisms responsible for photoresponse appearance at light quant energy sufficiently lower than all characteristic energies in electronic spectrum are discussed.
Keywords
IV-VI semiconductors; gallium; indium; lead compounds; terahertz wave spectra; valency; vanadium; PbTe:In,Ga,V; electronic spectrum; lead telluride; mixed valence impurities; photoconductive response; photoresponse appearance; photosensitivity; terahertz spectral range; Impurities; Laser excitation; Photoconductivity; Tellurium; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665862
Filename
6665862
Link To Document