Title :
THz free-electron laser spectroscopy of magnetoexcitons in semiconductor quantum wells
Author :
Bhattacharyya, J. ; Zybell, S. ; Winnerl, S. ; Schneebeli, L. ; Bottge, C.N. ; Breddermann, B. ; Kira, M. ; Koch, S.W. ; Helm, M. ; Schneider, H.
Author_Institution :
Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
Abstract :
Transitions between the 1s and 2p levels of the fundamental heavy-hole exciton in GaAs quantum wells, followed by scattering into the 2s state, are investigated by resonant THz excitations using a free-electron laser. We report on the external control of this intra-excitonic population transfer by an external magnetic field.
Keywords :
III-V semiconductors; excitons; free electron lasers; gallium arsenide; semiconductor quantum wells; terahertz wave spectra; 1s-2p level transitions; 2s state; GaAs; THz free-electron laser spectroscopy; external magnetic field; heavy-hole exciton; intraexcitonic population transfer; magnetoexcitons; quantum wells; resonant THz excitations; Excitons; Free electron lasers; Laser excitation; Magnetic fields; Scattering; Sociology; Statistics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665864
