Probing the critical electronic properties of III–V nanowires using optical pump-terahertz probe spectroscopy

Author

Joyce, H.J. ; Docherty, Callum J. ; Yong, Chaw-Keong ; Wong-Leung, J. ; Qiang Gao ; Paiman, S. ; Tan, H.H. ; Jagadish, C. ; Lloyd-Hughes, James ; Herz, L.M. ; Johnstona, Michael B.

Author_Institution

Dept. of Phys., Univ. of Oxford, Oxford, UK

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm²V^-1s^-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; nanowires; optical pumping; photoconductivity; surface recombination; terahertz wave spectra; GaAs; GaAs nanowire; III-V nanowires; InAs; InAs nanowire; InP; InP nanowire; critical electronic properties; optical pump-terahertz probe spectroscopy; photoconductivity lifetimes; surface recombination velocity; temperature 293 K to 298 K; Gallium arsenide; Indium phosphide; Nanowires; Photoconductivity; Spectroscopy; Spontaneous emission; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665866

Filename

6665866