• DocumentCode
    644923
  • Title

    Room-temperature terahertz heterodyne mixing in GaAs commercial transistors

  • Author

    Tohme, L. ; Blin, S. ; Nouvel, P. ; Varani, Luca ; Penarier, A.

  • Author_Institution
    Teralab, Univ. Montpellier 2, Montpellier, France
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we report on the detection of terahertz heterodyne mixing in GaAs ultra-low noise Pseudomorphic High Electron Mobility Transistors (pHEMT) at room temperature. For this purpose, we used two 0.300 THz sources in order to generate mixing up to 45 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; terahertz wave devices; commercial transistors; frequency 0.300 THz; room-temperature terahertz heterodyne mixing; temperature 293 K to 298 K; ultra-low noise pHEMT; ultra-low noise pseudomorphic high electron mobility transistors; Noise; Plasma measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665895
  • Filename
    6665895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644923