Title :
Room-temperature terahertz heterodyne mixing in GaAs commercial transistors
Author :
Tohme, L. ; Blin, S. ; Nouvel, P. ; Varani, Luca ; Penarier, A.
Author_Institution :
Teralab, Univ. Montpellier 2, Montpellier, France
Abstract :
In this paper, we report on the detection of terahertz heterodyne mixing in GaAs ultra-low noise Pseudomorphic High Electron Mobility Transistors (pHEMT) at room temperature. For this purpose, we used two 0.300 THz sources in order to generate mixing up to 45 GHz.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; terahertz wave devices; commercial transistors; frequency 0.300 THz; room-temperature terahertz heterodyne mixing; temperature 293 K to 298 K; ultra-low noise pHEMT; ultra-low noise pseudomorphic high electron mobility transistors; Noise; Plasma measurements;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665895
