DocumentCode :
645664
Title :
Dangerous effects induced on power MOSFETs by terrestrial neutrons: A theoretical study and an empirical approach based on accelerated experimental analysis
Author :
Consentino, G. ; Laudani, M. ; Privitera, Giuseppe ; Parlato, A. ; Marchese, N. ; Tomarchio, E. ; Pace, Calogero ; Giordano, C. ; Mazzeo, M. ; Ambato, J. L. Hernandez
Author_Institution :
Power Transistor Div. - PTD, STMicroelectron., Catania, Italy
fYear :
2013
fDate :
3-5 Oct. 2013
Firstpage :
1
Lastpage :
6
Abstract :
This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with the Am-Be source at the University of Palermo are discussed.
Keywords :
neutrons; power MOSFET; accelerated experimental analysis; accelerated test; dangerous effects; power MOSFET; single event effects; terrestrial neutrons; Life estimation; Logic gates; MOSFET; Neutrons; Radiation effects; Reliability; Stress; Am-Be source; SEB; SEE; SEGR; Terrestrial neutrons; accelerated tests; power MOSFETs; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
AEIT Annual Conference, 2013
Conference_Location :
Mondello
Print_ISBN :
978-8-8872-3734-4
Type :
conf
DOI :
10.1109/AEIT.2013.6666813
Filename :
6666813
Link To Document :
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