• DocumentCode
    647299
  • Title

    Biomedical 3xVDD current micro-stimulator using standard 0.35um CMOS process

  • Author

    Tzung-Je Lee ; Hsin-Chang Chen

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Cheng Shiu Univ., Cheng Shiu, Taiwan
  • fYear
    2013
  • fDate
    18-19 Sept. 2013
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.
  • Keywords
    CMOS integrated circuits; bioelectric phenomena; biomedical engineering; reliability; biomedical 3xVDD current microstimulator; gate oxide overstress; high impedance electrode; high voltage protection circuit; implantable biomedical application; reliability; saturation problem; standard CMOS process; High-impedance; biomedical; micro-stimulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ICCAS), 2013 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/CircuitsAndSystems.2013.6671638
  • Filename
    6671638